r07ds1064ej0100 rev.1.00 page 1 of 7 apr 10, 2013 preliminary datasheet bcr12fm-14lb 700v - 12a - triac medium power use features ? i t (rms) : 12 a ? v drm : 800 v (tj =125 c) ? tj: 150 c ? i fgti , i rgti , i rgt iii :30 ma ? insulated type ? planar passivation type ? v iso : 2000v outline 2 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal renesas package code: prss0003ag-a (package name: to-220fp) 1 2 3 applications washing machine, inversion operation of capacitor motor, and other general controlling devices maximum ratings voltage class parameter symbol 14 unit conditions repetitive peak off-state voltage note1 v drm 800 v tj=125 ?c 700 tj=150 ?c non-repetitive peak off-state voltage note1 v dsm 840 v parameter symbol ratings unit conditions rms on-state current i t (rms) 12 a commercial frequency, sine full wave 360? conduction, tc = 102 ?c surge on-state current i tsm 120 a 50hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusion i 2 t 60 a 2 s value corresponding to 1 cycle of half wave 50hz, surge on-state current peak gate power dissipation p gm 5 w average gate power dissipation p g (av) 0.5 w peak gate voltage v gm 10 v peak gate current i gm 2 a junction temperature tj ?40 to +150 ?c storage temperature tstg ?40 to +150 ?c mass ? 1.9 g typical value isolation voltage note5 v iso 2000 v ta = 25 ?c, ac 1 minute, t 1 ? t 2 ? g terminal to case r07ds1064ej0100 rev.1.00 apr 10, 2013
bcr12fm-14lb preliminary r07ds1064ej0100 rev.1.00 page 2 of 7 apr 10, 2013 electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 2.0 ma tj = 150 ?c, v drm applied on-state voltage v tm ? ? 1.6 v tc = 25 ?c, i tm = 20 a, instantaneous measurement ? v fgt ? ? ? 1.5 v ?? v rgt ? ? ? 1.5 v gate trigger voltage note2 ??? v rgt ??? ? ? 1.5 v tj = 25 ?c, v d = 6 v, r l = 6 ? , r g = 330 ? ? i fgt ? ? ? 30 ma ?? i rgt ? ? ? 30 ma gate trigger curent note2 ??? i rgt ??? ? ? 30 ma tj = 25 ?c, v d = 6 v, r l = 6 ? , r g = 330 ? gate non-trigger voltage v gd 0.2 ? ? v tj = 125 ?c, v d = 1/2 v drm 0.1 ? ? v tj = 150?c, v d = 1/2 v drm thermal resistance r th (j-c) ? ? 3.3 ? c/w junction to case note3 critical-rate of rise of o ff-state (dv/dt)c 10 ? ? v/ ? s tj = 125 ?c commutation voltage note4 1 ? ? v/ ? s tj = 150 ?c notes: 1. gate open. 2. measurement using the gate trigger characteristics measurement circuit. 3. the contact thermal resistance r th (c-f) in case of greasing is 0.5 ?c /w. 4. test conditions of the critical-rate of rise of o ff-state commutation voltage is shown in the table below. 5. make sure that your finished product containing this device meets your safe isolation requirements. for safety, it's advisable that heatsink is electrically floating. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125 ?c/150 ?c 2. rate of decay of on-state commutating current (di/dt)c = ?6.0 a/ms 3. peak off-state voltage v d = 400 v supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
bcr12fm-14lb preliminary r07ds1064ej0100 rev.1.00 page 3 of 7 apr 10, 2013 performance curves maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60hz) surge on-state current (a) gate characteristics (i, ii and iii) gate current (ma) gate voltage (v) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) gate trigger current vs. junction temperature junction temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) 10 0 2 5 10 1 80 40 3 7 10 2 4 2 5 3 74 120 160 200 60 20 100 140 180 0 0.5 1.5 2.5 3.5 1.023 .0 4.0 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 10 0 23 10 1 57 10 2 23 57 10 3 23 57 10 4 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? 1 10 1 10 3 7 5 3 2 10 2 7 5 3 2 4 4 10 1 10 3 7 5 3 2 ?60 ? 20 20 10 2 7 5 3 2 6 0100 140 4 4 ?400 4 0 8 0 120 160 ?60 ? 20 20 6 0100 140 ?400 40 8 0 120 160 tj = 25c tj = 150c v gm = 10v i gm = 2a p gm = 5w v gt = 1.5v i fgt i , i rgt iii i rgt i v gd = 0.1v p g(av) = 0.5w i rgt i , i rgt iii i fgt i typical example typical example maximum transient thermal impedance characteristics (junction to case) conduction time (cycles at 60hz) transient thermal impedance (c/w) 23 10 ?1 57 10 0 23 57 10 1 23 57 10 2 3.5 3.0 2.5 2.0 1.5 1.0 0.5 4.0 0 23 10 2 57 10 3 23 5
bcr12fm-14lb preliminary r07ds1064ej0100 rev.1.00 page 4 of 7 apr 10, 2013 maximum transient thermal impedance characteristics (junction to ambient) transient thermal impedance ( c/w) conduction time (cy cles at 60hz) on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation junction temperature ( c) rep eti t ive peak o ff-state current ( tj = t c) rep eti t ive peak o ff-state current ( tj = 2 5c) 100 ( % ) repetitive peak off-state current vs. junction temperature 10 3 10 ?1 10 3 10 4 10 2 7 5 3 2 10 0 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 1 23 57 23 57 10 2 10 5 23 57 23 57 16 12 6 4 2 14 10 8 0 16 0248 6 10 12 1 4 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 ?60 ? 20 20 6 0100 140 ?400 40 8 0 120 160 no fins 360 conduction resistive, inductive loads typical example rms on-state current (a) case temperature (c) allowable case temperature vs. rms on-state current 160 120 100 60 20 0 16 02 6 10 1 4 40 80 140 48 12 curves apply regardless of conduction angle 360 conduction resistive, inductive loads rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current 160 120 100 60 20 0 16 02 6 10 1 4 40 80 140 48 12 all fins are black painted aluminum and greased 120 t2.3 100 100 t2.3 60 60 t2.3 cur v e s a pply regardl e ss o f condu cti on angl e resist ive , i ndu ctive loads n atu ral con v ecti on allowable ambient temperature vs. rms on-state current ambient temperature (c) rms on-state current (a) 160 120 100 60 20 0 4.0 00 .5 1.5 2.5 3.5 40 80 140 1.02 .0 3.0 natural con vection no fins curves apply regardless of conduction angle resistive, inductiv e loads
bcr12fm-14lb preliminary r07ds1064ej0100 rev.1.00 page 5 of 7 apr 10, 2013 breakover voltage vs. junction temperature junction temperature ( c) breakover voltage (tc) breakover voltage (25c) 100 (%) commutation characteristics (tj=125c ) critical rate of rise of off-state commutating voltage (v/s) rate of decay of on-state commutating current (a/ms) holding current vs. junction temperature junction temperature ( c) holding current (tj = tc) holding current (tj = 25c) 100 (%) latching current (ma) latching current vs. junction temperature junction temperature ( c) 10 3 7 5 3 2 10 2 7 5 3 2 4 4 10 1 160 ?40 040 8 0 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 ?6 0 ?20 20 6 0 100 140 ?40 0 40 8 0 120 160 typical example distribution t 2 + , g ? typical example t 2 + , g + t 2 ? , g ? typical example 160 100 80 40 20 0 140 60 120 10 2 7 5 10 1 3 2 7 5 10 0 3 2 ?6 0 ?20 20 6 0 100 140 ?40 0 40 8 0 120 160 23 10 0 57 10 1 23 57 10 2 23 57 10 3 typical example m ain v oltage m ain current i t (di/dt)c v d time time (dv /dt)c i quadrant iii quadrant m inimu m characteris tics v alu e t ypical ex amp le t j = 125c i t = 4a = 5 00 s v d = 200v f = 3hz rate of rise of off-state voltage (v/s) breakover voltage (dv/dt = xv/s) breakover voltage (dv/dt = 1v/s) 100 (%) breakov er v oltage vs. rate of ris e o f off-state v oltage (tj =125c) 23 10 1 57 10 2 23 57 10 3 23 57 10 4 120 0 20 40 60 80 100 140 160 typical example tj = 125c iii quadrant i quadrant rate of rise of off-state voltage (v/s) breakover voltage (dv/dt = xv/s) breakover voltage (dv/dt = 1v/s) 100 (%) breakov er v oltage vs. rate of ris e of off-state v oltage (tj =15 0 c) 23 10 1 57 10 2 23 57 10 3 23 57 10 4 120 0 20 40 60 80 100 140 160 typical example tj = 150c iii quadrant i quadrant
bcr12fm-14lb preliminary r07ds1064ej0100 rev.1.00 page 6 of 7 apr 10, 2013 c 1 = 0.1 to 0.47 7 to 100 c 0 = 0.1 characteristics test circuits recommended circuit values around the tria c test procedure i test procedure iii test procedure ii commutation characteristics (tj=150 c) critical rate of rise of off-state commutating voltage (v/ s) rate of decay of on-state commutating current (a/ms) gate trigger current (tw) gate trigger current (dc) 100 (%) gate current pulse width (s) gate trigger current vs. gate current pulse width 10 1 10 3 7 5 3 2 10 0 23 57 10 1 10 2 7 5 3 2 23 57 10 2 4 4 44 c 1 c 0 r 0 r 1 6 6 6 6v 6v 6v 330 v a v a v typical example i rgt iii i rgt i i fgt i load 10 2 7 5 10 1 3 2 7 5 10 0 3 2 23 10 0 57 10 1 23 57 10 2 23 57 10 3 t ypical ex amp le t j = 15 0 c i t = 4a 5 00 s v d = 200v f = 3hz m ain v oltage m ain current i t (di/dt)c v d time time (dv /dt)c i quadrant iii quadrant m inimu m characteris tics v alu e
bcr12fm-14lb preliminary r07ds1064ej0100 rev.1.00 page 7 of 7 apr 10, 2013 package dimensions 5.08 0.20 3.18 0.20 6.68 0.20 8 0.10 0.80 0.20 1.28 0.30 2.76 0.20 4.7 0.2 0.50 2.54 0.20 max 1.47 3.3 0.2 15.87 0.20 12.98 0.30 10.16 0.20 unit: mm ? mass[typ.] ? code jeita package code previous code package name to-220fp ordering information orderable part number packing quantity remark bcr12fm-14lb#bb0 tube 50 pcs. straight type bcr12fm-14lba8#bb0 tube 50 pcs. a8 lead form note : please confirm the specificat ion about the shipping in detail.
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